Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe2
نویسندگان
چکیده
منابع مشابه
Strain-induced indirect to direct bandgap transition in multilayer WSe2.
Transition metal dichalcogenides, such as MoS2 and WSe2, have recently gained tremendous interest for electronic and optoelectronic applications. MoS2 and WSe2 monolayers are direct bandgap and show bright photoluminescence (PL), whereas multilayers exhibit much weaker PL due to their indirect optical bandgap. This presents an obstacle for a number of device applications involving light harvest...
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ژورنال
عنوان ژورنال: Nano Letters
سال: 2014
ISSN: 1530-6984,1530-6992
DOI: 10.1021/nl501638a